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Low-Noise Front-End Electronics for Semiconductor X-Ray and Gamma-Ray Detectors.

PB98163421

Publication Date	1998
Personal Author	Niemelae, A.
Page Count	138
Abstract	This thesis deals with improving the performance of semiconductor X-ray and gamma-ray detection systems with the help of low-noise analog electronics. Several methods were used to improve the performance of the detection systems: using optimum preamplifier topologies, cooling the detector and input FET in order to reduce leakage currents and noise, using low-noise JFETS as input devices of the preamplifier, matching the JFET gat capacitance as closely as possible with the detector capacitance, using good-quality low-loss materials for mounting the detector and the JFET in order minimize the dielectric noise, and using rise-time discrimination at the pulse-shaping amplifier in order to reduce the effect of photon events that have experienced charge carrier trapping in the detector materials.
Keywords	Semiconductor detectors X-ray detectors Gamma ray detection Low noise Electronic equipment Front end processors Signal processing Noise sources Ionizing radiation Radiation detectors Spectroscopy Performance evaluation Theses Foreign technology JFET(Junction Function Effect Transistor)
Source Agency	Helsinki University of Technology
NTIS Subject Category	49H - Semiconductor Devices 77E - Nuclear Instrumentation
Corporate Authors	Helsinki Univ. of Technology, Espoo (Finland). Electronic Circuit Design Lab.
Supplemental Notes	Also pub. as Helsinki Univ. of Technology, Espoo (Finland). Electronic Circuit Design Lab. rept. no. REPT-24.
Document Type	Thesis
Title Note	Doctoral thesis.
NTIS Issue Number	199822

Low-Noise Front-End Electronics for Semiconductor X-Ray and Gamma-Ray Detectors.

Low-Noise Front-End Electronics for Semiconductor X-Ray and Gamma-Ray Detectors.
PB98163421

Publication Date	1998
Personal Author	Niemelae, A.
Page Count	138
Abstract	This thesis deals with improving the performance of semiconductor X-ray and gamma-ray detection systems with the help of low-noise analog electronics. Several methods were used to improve the performance of the detection systems: using optimum preamplifier topologies, cooling the detector and input FET in order to reduce leakage currents and noise, using low-noise JFETS as input devices of the preamplifier, matching the JFET gat capacitance as closely as possible with the detector capacitance, using good-quality low-loss materials for mounting the detector and the JFET in order minimize the dielectric noise, and using rise-time discrimination at the pulse-shaping amplifier in order to reduce the effect of photon events that have experienced charge carrier trapping in the detector materials.
Keywords	Semiconductor detectors X-ray detectors Gamma ray detection Low noise Electronic equipment Front end processors Signal processing Noise sources Ionizing radiation Radiation detectors Spectroscopy Performance evaluation Theses Foreign technology JFET(Junction Function Effect Transistor)
Source Agency	Helsinki University of Technology
NTIS Subject Category	49H - Semiconductor Devices 77E - Nuclear Instrumentation
Corporate Authors	Helsinki Univ. of Technology, Espoo (Finland). Electronic Circuit Design Lab.
Supplemental Notes	Also pub. as Helsinki Univ. of Technology, Espoo (Finland). Electronic Circuit Design Lab. rept. no. REPT-24.
Document Type	Thesis
Title Note	Doctoral thesis.
NTIS Issue Number	199822