Publication Date |
1983 |
Personal Author |
Mihlan, G. J.; Willson, R. D.; Mitchell, R. I. |
Page Count |
37 |
Abstract |
A walk through survey was conducted at INMOS Corporation (SIC-3674), Colorado Springs, Colorado on October 13, 1981 to evaluate control technology for integrated circuit fabrication. Operations performed at the facility included thermal oxidation; photolithographic processes; wet chemical cleaning and etching; plasma etching; chemical vapor deposition of silicon-dioxide (14808607), silicon-nitride (12033895), and polycrystalline-silicon (7440213); diffusion; ion implantation; metalization by radiofrequency sputtering; and hydrogen annealing. Engineering controls varied by process operation and included isolation, local exhaust ventilation, shielding, and enclosure, and process substitution. Microprocessors were used to control process equipment for several operations. Continuous area monitoring for arsine (7784421) and phosphine (7803512) was performed by infrared spectrophotometry. |
Keywords |
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Source Agency |
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NTIS Subject Category |
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Corporate Authors |
Battelle Columbus Labs., OH.; Industrial Environmental Research Lab.-Cincinnati, OH.; National Inst. for Occupational Safety and Health, Cincinnati, OH. Div. |
Supplemental Notes |
Sponsored in part by Industrial Environmental Research Lab.-Cincinnati, OH., and National Inst. for Occupational Safety and Health, Cincinnati, OH. Div. of Physical Sciences and Engineering. |
Document Type |
Technical Report |
NTIS Issue Number |
198414 |