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Plasmonic Enhanced Ultrafast Switch.

DE2010973847

Publication Date	2009
Personal Author	Shaner, E. A.; Passmore, B.; Barrick, T.; Harris, T.; Subramania, G.; Reno, J.
Page Count	17
Abstract	Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.
Keywords	Switches Electrical transients Electrodes Plasmons Photoconductors Radiations Recombination Gallium arsenides Switchgears
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	201021
Contract Number	DE-AC04-94AL85000

Plasmonic Enhanced Ultrafast Switch.

Plasmonic Enhanced Ultrafast Switch.
DE2010973847

Publication Date	2009
Personal Author	Shaner, E. A.; Passmore, B.; Barrick, T.; Harris, T.; Subramania, G.; Reno, J.
Page Count	17
Abstract	Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.
Keywords	Switches Electrical transients Electrodes Plasmons Photoconductors Radiations Recombination Gallium arsenides Switchgears
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	201021
Contract Number	DE-AC04-94AL85000