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Details

275 C Downhole Switched-Mode Power Supply.

DE2009947861

Publication Date	2008
Personal Author	Hutchens, C.; Madhuravasal, V.
Page Count	53
Abstract	A vee-square (V2) control based controller IC is developed for a switch mode power supply capable of operating at extreme temperature/harsh environment conditions. A buck type regulator with silicon carbide power junction field effect transistors (JFET) as power devices is used to analyze the performance of controller. Special emphases are made on the analog sub-blocks--voltage reference, operational transconductance amplifier and comparator as individual building blocks. Transformer coupled gate drives and high temperature operable magnetic cores and capacitors are identified and tested for use in the design. Conventional ceramic chip packaging of ICs combined with lead carrier type mounting of passive filter components is introduced for hybrid packaging of the complete product. The developed SMPS is anticipated to support the operation of down-hole microcontrollers and other electronics devices that require low/medium power filtered dc inputs over an operating temperature of 275 C.
Keywords	Power supplies Integrated circuits Amplifiers Capacitors Transformers Scheduled tasks Buck Silicon carbide High temperature DC-DC converter SMPS SOS Soi Gate drive Vee-square
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	East Central Oklahoma State Univ., Ada.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200915
Contract Number	DE-FC26-06NT42948

275 C Downhole Switched-Mode Power Supply.

275 C Downhole Switched-Mode Power Supply.
DE2009947861

Publication Date	2008
Personal Author	Hutchens, C.; Madhuravasal, V.
Page Count	53
Abstract	A vee-square (V2) control based controller IC is developed for a switch mode power supply capable of operating at extreme temperature/harsh environment conditions. A buck type regulator with silicon carbide power junction field effect transistors (JFET) as power devices is used to analyze the performance of controller. Special emphases are made on the analog sub-blocks--voltage reference, operational transconductance amplifier and comparator as individual building blocks. Transformer coupled gate drives and high temperature operable magnetic cores and capacitors are identified and tested for use in the design. Conventional ceramic chip packaging of ICs combined with lead carrier type mounting of passive filter components is introduced for hybrid packaging of the complete product. The developed SMPS is anticipated to support the operation of down-hole microcontrollers and other electronics devices that require low/medium power filtered dc inputs over an operating temperature of 275 C.
Keywords	Power supplies Integrated circuits Amplifiers Capacitors Transformers Scheduled tasks Buck Silicon carbide High temperature DC-DC converter SMPS SOS Soi Gate drive Vee-square
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	East Central Oklahoma State Univ., Ada.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200915
Contract Number	DE-FC26-06NT42948