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Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells. Final Technical Report, 1 October 2003-15 January 2008.


DE2008942087

Publication Date 2008
Personal Author Rozgonyi, G. A.; Youssef, K.
Page Count 8
Abstract Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.
Keywords
  • Solar energy
  • Materials science
  • Crystal growth
  • Defects
  • Dislocations
  • Efficiency
  • Fracture properties
  • Grain boundaries
  • Hardness
  • Impurities
  • Interstitials
  • Mechanical properties
  • Oxygen
  • Point defects
  • Silicon
  • Solar cells
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors National Renewable Energy Lab., Golden, CO.; North Carolina State Univ. at Raleigh.
Supplemental Notes Prepared in cooperation with North Carolina State Univ. at Raleigh.
Document Type Technical Report
NTIS Issue Number 200910
Contract Number
  • DE-AC36-08-GO28308
Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells. Final Technical Report, 1 October 2003-15 January 2008.
Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells. Final Technical Report, 1 October 2003-15 January 2008.
DE2008942087

  • Solar energy
  • Materials science
  • Crystal growth
  • Defects
  • Dislocations
  • Efficiency
  • Fracture properties
  • Grain boundaries
  • Hardness
  • Impurities
  • Interstitials
  • Mechanical properties
  • Oxygen
  • Point defects
  • Silicon
  • Solar cells
  • Technical Information Center Oak Ridge Tennessee
  • DE-AC36-08-GO28308
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