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Inverted GalnP/GaAs/InGaAs Triple-junction Solar Cells with Low-stress Metamorphic Bottom Junctions.

DE2008940664

Publication Date	2008
Personal Author	Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.
Page Count	38
Abstract	We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.
Keywords	Solar cells Gallium phosphides Gallium arsenides Junctions Indium arsenides Solar energy Semiconductor junctions Configuration Design Dislocations Low stress Metamorphic junction Photovoltaic cells Stress and strain
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.
Supplemental Notes	Presented at 33rd IEEE Photovoltaic Specialists Conference, San Diego, 2008.
Document Type	Technical Report
NTIS Issue Number	200908

Inverted GalnP/GaAs/InGaAs Triple-junction Solar Cells with Low-stress Metamorphic Bottom Junctions.

Inverted GalnP/GaAs/InGaAs Triple-junction Solar Cells with Low-stress Metamorphic Bottom Junctions.
DE2008940664

Publication Date	2008
Personal Author	Geisz, J. F.; Kurtz, S. R.; Wanlass, M. W.; Ward, J. S.; Duda, A.
Page Count	38
Abstract	We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.
Keywords	Solar cells Gallium phosphides Gallium arsenides Junctions Indium arsenides Solar energy Semiconductor junctions Configuration Design Dislocations Low stress Metamorphic junction Photovoltaic cells Stress and strain
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.
Supplemental Notes	Presented at 33rd IEEE Photovoltaic Specialists Conference, San Diego, 2008.
Document Type	Technical Report
NTIS Issue Number	200908