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The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

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Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses.

DE2007920281

Publication Date	2007
Personal Author	Cowan, B. M.
Page Count	10
Abstract	We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0:2 J=cm2 at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.
Keywords	Silicon Measurements Motivation Experimental setups Diagnostics Procedures Breakdown thresholds Wavelengths Air Crystalline Ultrafast infrared pulses Optical damage threshold
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Tech-X Corp., Boulder, CO.; Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Prepared in cooperation with Stanford Linear Accelerator Center, CA. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200810
Contract Number	DE-AC02-76SF00515

Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses.

Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses.
DE2007920281

Publication Date	2007
Personal Author	Cowan, B. M.
Page Count	10
Abstract	We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0:2 J=cm2 at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.
Keywords	Silicon Measurements Motivation Experimental setups Diagnostics Procedures Breakdown thresholds Wavelengths Air Crystalline Ultrafast infrared pulses Optical damage threshold
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Tech-X Corp., Boulder, CO.; Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Prepared in cooperation with Stanford Linear Accelerator Center, CA. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200810
Contract Number	DE-AC02-76SF00515