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Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAIO.

DE2006861962

Publication Date	2006
Personal Author	Jasinski, J.; Liliental-Weber, Z.; Maruska, H. P.; Chai, B. H.; Hill, D. W.; Chou, M. M.
Page Count	6
Abstract	(1010) GaN wafers grown on (100) face of gamma-LiAlO2 were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1 type. This is consistent with diffraction contrast experiments.
Keywords	Wafers Gallium nitrides Structural properties Lithium inorganic compounds Aluminates Crystal lattices Stacking
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Department of Energy, Washington, DC.; Crystal Photonics, Inc., Oviedo, FL.
Supplemental Notes	Prepared in cooperation with Crystal Photonics, Inc., Oviedo, FL. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200707

Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAIO.

Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAIO.
DE2006861962

Publication Date	2006
Personal Author	Jasinski, J.; Liliental-Weber, Z.; Maruska, H. P.; Chai, B. H.; Hill, D. W.; Chou, M. M.
Page Count	6
Abstract	(1010) GaN wafers grown on (100) face of gamma-LiAlO2 were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1 type. This is consistent with diffraction contrast experiments.
Keywords	Wafers Gallium nitrides Structural properties Lithium inorganic compounds Aluminates Crystal lattices Stacking
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Department of Energy, Washington, DC.; Crystal Photonics, Inc., Oviedo, FL.
Supplemental Notes	Prepared in cooperation with Crystal Photonics, Inc., Oviedo, FL. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200707