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Toward a Unified Treatment of Electronic Processes in Organic Semiconductors.

DE2005860990

Publication Date	2005
Personal Author	Gregg, B. A.
Page Count	10
Abstract	A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.
Keywords	Organic semiconductors Semiconductors Electrons Doped materials Charge density Electric fields Carrier density Carrier mobility
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200612

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors.

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors.
DE2005860990

Publication Date	2005
Personal Author	Gregg, B. A.
Page Count	10
Abstract	A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.
Keywords	Organic semiconductors Semiconductors Electrons Doped materials Charge density Electric fields Carrier density Carrier mobility
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200612