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Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb.

DE2005837455

Publication Date	2004
Personal Author	Donetsky, D.; Anikeev, S.; Gu, N.; Belenky, G.; Luryi, S.; Wang, C. A.; Shiau, D. A.; Dashiell, M.; Beausang, J.; Nichols, G.
Page Count	14
Abstract	This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.
Keywords	Recombination processes Photoluminescence Thermophotovoltaics Confinement Excitation Thermionic emission Velocity Optimization Minority carrier lifetime measurements
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Corp., Bethesda, MD.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200601

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb.

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb.
DE2005837455

Publication Date	2004
Personal Author	Donetsky, D.; Anikeev, S.; Gu, N.; Belenky, G.; Luryi, S.; Wang, C. A.; Shiau, D. A.; Dashiell, M.; Beausang, J.; Nichols, G.
Page Count	14
Abstract	This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.
Keywords	Recombination processes Photoluminescence Thermophotovoltaics Confinement Excitation Thermionic emission Velocity Optimization Minority carrier lifetime measurements
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Corp., Bethesda, MD.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200601