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Growth of Quantum Wires on Step-Bunched Substrates.


DE2005836577

Publication Date 2005
Page Count 12
Abstract This proposal initiates a combined theoretical and experimental multidisciplinary research effort to explore a novel approach for growing metallic and magnetic nanowires on step-bunched semiconductor and dielectric substrates, and to lay the groundwork for understanding the growth mechanisms and the electronic, electrical, and magnetic properties of metallic and magnetic nanowires. The research will focus on four topics: (1) fundamental studies of step bunching and self-organization in a strained thin film for creating step-bunched substrates; (2) interaction between metal adatoms (Al,Cu, and Ni) and semiconductor (Si and SiGe) and dielectric (CaF2) surface steps; (3) growth and characterization of metallic and magnetic nanowires on step-bunched templates; and (4) fabrication of superlattices of nanowires by growing multilayer films. We propose to attack these problems at both a microscopic and macroscopic level, using state-of-the-art theoretical and experimental techniques.
Keywords
  • Quantum electronics
  • Substrates
  • Semiconductors
  • Electrical properties
  • Electronic equipment
  • Magnetic materials
  • Metals
  • Adatoms
  • Thin films
  • Fabrication
  • Superlattices
  • Quantum wires
  • Nanowires
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200608
Growth of Quantum Wires on Step-Bunched Substrates.
Growth of Quantum Wires on Step-Bunched Substrates.
DE2005836577

  • Quantum electronics
  • Substrates
  • Semiconductors
  • Electrical properties
  • Electronic equipment
  • Magnetic materials
  • Metals
  • Adatoms
  • Thin films
  • Fabrication
  • Superlattices
  • Quantum wires
  • Nanowires
  • Technical Information Center Oak Ridge Tennessee
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