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Antimony Based III-V Thermophotovoltaic Devices.

DE2005836453

Publication Date	2004
Personal Author	Wang, C. A.
Page Count	42
Abstract	Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E(sub g) ranging from (approx.) 0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E(sub g) cells, but degrades to below 80% with decreasing E(sub g) of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E(sub g) = 0.45-eV has extended spectral response out to 4.3 (micro)m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.
Keywords	Thermophotovoltaic converters Alloys Antimony Gallium antimonides Indium antimonides Energy gap Performance Quantum efficiency Radiators Recombination Spectral response
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519

Antimony Based III-V Thermophotovoltaic Devices.

Antimony Based III-V Thermophotovoltaic Devices.
DE2005836453

Publication Date	2004
Personal Author	Wang, C. A.
Page Count	42
Abstract	Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E(sub g) ranging from (approx.) 0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E(sub g) cells, but degrades to below 80% with decreasing E(sub g) of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E(sub g) = 0.45-eV has extended spectral response out to 4.3 (micro)m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.
Keywords	Thermophotovoltaic converters Alloys Antimony Gallium antimonides Indium antimonides Energy gap Performance Quantum efficiency Radiators Recombination Spectral response
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519