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Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GalnAsSb Lattice-Matched to GaSb.

DE2005836448

Publication Date	2004
Personal Author	Anikeev, S.; Donetsky, D.; Belenky, G.; Luryl, S.; Wang, C. A.; Shiau, D. A.; Dashiell, M.
Page Count	20
Abstract	Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination rate.
Keywords	Radiative recombination Photon recycling Photons Minority carrier lifetime Isotype double heterostructures Optoelectronic minority carrier devices
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	State Univ. of New York at Stony Brook.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200518

Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GalnAsSb Lattice-Matched to GaSb.

Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GalnAsSb Lattice-Matched to GaSb.
DE2005836448

Publication Date	2004
Personal Author	Anikeev, S.; Donetsky, D.; Belenky, G.; Luryl, S.; Wang, C. A.; Shiau, D. A.; Dashiell, M.
Page Count	20
Abstract	Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination rate.
Keywords	Radiative recombination Photon recycling Photons Minority carrier lifetime Isotype double heterostructures Optoelectronic minority carrier devices
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	State Univ. of New York at Stony Brook.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200518