National Technical Reports Library

The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

Details

Microstructure of Laterally Overgrown Gan Layers.

DE2005835807

Publication Date	2005
Personal Author	Liliental-Weber, Z.; Cherns, D.
Page Count	32
Abstract	Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.
Keywords	Transmission electron microscopy Sampling Plan-view Cross section Microscopy Epitaxial growth Gallium nitride Burgers vector Dislocations Gallium nitride(GaN)
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Bristol Univ. (England). H.H. Wills Physics Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200525

Microstructure of Laterally Overgrown Gan Layers.

Microstructure of Laterally Overgrown Gan Layers.
DE2005835807

Publication Date	2005
Personal Author	Liliental-Weber, Z.; Cherns, D.
Page Count	32
Abstract	Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.
Keywords	Transmission electron microscopy Sampling Plan-view Cross section Microscopy Epitaxial growth Gallium nitride Burgers vector Dislocations Gallium nitride(GaN)
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Bristol Univ. (England). H.H. Wills Physics Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200525