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The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

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Non-Equilibrium Approach to Doping of Wide Bandgap Materials by Molecular Beam Epitaxy.

DE2005824891

Publication Date	2004
Personal Author	Tamargo, M. C.; Neumark, G. F.
Page Count	18
Abstract	It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a 'co-dopant' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.
Keywords	Wide gap semiconductors Doping Energy gap Semicondutor materials Doped materials Co-doping Molecular beam epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	City Univ. of New York. Dept. of Physics.; Department of Energy, Washington, DC.; Columbia Univ., New York. Dept. of Applied Physics and Applied
Supplemental Notes	Prepared in cooperation with Columbia Univ., New York. Dept. of Applied Physics and Applied Mathematics. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519

Non-Equilibrium Approach to Doping of Wide Bandgap Materials by Molecular Beam Epitaxy.

Non-Equilibrium Approach to Doping of Wide Bandgap Materials by Molecular Beam Epitaxy.
DE2005824891

Publication Date	2004
Personal Author	Tamargo, M. C.; Neumark, G. F.
Page Count	18
Abstract	It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a 'co-dopant' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.
Keywords	Wide gap semiconductors Doping Energy gap Semicondutor materials Doped materials Co-doping Molecular beam epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	City Univ. of New York. Dept. of Physics.; Department of Energy, Washington, DC.; Columbia Univ., New York. Dept. of Applied Physics and Applied
Supplemental Notes	Prepared in cooperation with Columbia Univ., New York. Dept. of Applied Physics and Applied Mathematics. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519