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DE200515014573

Publication Date	2004
Personal Author	Nelson, A. J.; Dunn, J.; van Buuren, T.; Hunter, J.
Page Count	12
Abstract	We demonstrate single-shot x-ray laser induced time-of-flight photoelectron spectroscopy on semiconductor and metal surfaces with picosecond time resolution. The LLNL COMET compact tabletop x-ray laser source provides the necessary high photon flux (>1012/pulse), monochromaticity, picosecond pulse duration, and coherence for probing ultrafast changes in the chemical and electronic structure of these materials. Static valence band and shallow core-level photoemission spectra are presented for ambient temperature Ge(100) and polycrystalline Cu foils. Surface contamination was removed by UV ozone cleaning prior to analysis. In addition, the ultrafast nature of this technique lends itself to true single-state measurements of shocked and heated materials. Time-resolved electron time-of-flight photoemission results for ultra-thin Cu will be presented.
Keywords	Photoelctron spectroscopy Electronic structure Metal surfaces Semiconductors Spectroscopy X-ray lasers Time of flight spectrometers Photoemission
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Livermore National Lab., CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519

Single-State ELectronic Structure Measurements Using Time-Resolved X-Ray Laser Induced Photoelectron Spectroscopy.

Single-State ELectronic Structure Measurements Using Time-Resolved X-Ray Laser Induced Photoelectron Spectroscopy.
DE200515014573

Publication Date	2004
Personal Author	Nelson, A. J.; Dunn, J.; van Buuren, T.; Hunter, J.
Page Count	12
Abstract	We demonstrate single-shot x-ray laser induced time-of-flight photoelectron spectroscopy on semiconductor and metal surfaces with picosecond time resolution. The LLNL COMET compact tabletop x-ray laser source provides the necessary high photon flux (>1012/pulse), monochromaticity, picosecond pulse duration, and coherence for probing ultrafast changes in the chemical and electronic structure of these materials. Static valence band and shallow core-level photoemission spectra are presented for ambient temperature Ge(100) and polycrystalline Cu foils. Surface contamination was removed by UV ozone cleaning prior to analysis. In addition, the ultrafast nature of this technique lends itself to true single-state measurements of shocked and heated materials. Time-resolved electron time-of-flight photoemission results for ultra-thin Cu will be presented.
Keywords	Photoelctron spectroscopy Electronic structure Metal surfaces Semiconductors Spectroscopy X-ray lasers Time of flight spectrometers Photoemission
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Livermore National Lab., CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200519