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DE2004826800

Publication Date	2004
Personal Author	Rochansky, A. V.
Page Count	14
Abstract	Strained layer heterostructure and short-period superlattice structures have been used to advantage in achieving highly spin-polarized electron photoemission. The strain-induced splitting of the valence band at the band-gap minimum provides a high electron polarization in the conduction band under excitation by circularly polarized light. Smearing of the interband absorption edge and the hole scattering processes lead to polarization in the band-edge absorption of less than 100%, polarization losses being typically about 6%. This mechanism sets a limit on the maximum polarization of emitted electrons. The initial polarization can be increased by choosing structures with a higher valence band splitting.
Keywords	Electron emission Superlattices Polarized beams Indium arsenides Aluminium arsenides Gallium arsenides Gallium phosphides Strains Polarization Splitting Electron sources
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200508

Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting.

Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting.
DE2004826800

Publication Date	2004
Personal Author	Rochansky, A. V.
Page Count	14
Abstract	Strained layer heterostructure and short-period superlattice structures have been used to advantage in achieving highly spin-polarized electron photoemission. The strain-induced splitting of the valence band at the band-gap minimum provides a high electron polarization in the conduction band under excitation by circularly polarized light. Smearing of the interband absorption edge and the hole scattering processes lead to polarization in the band-edge absorption of less than 100%, polarization losses being typically about 6%. This mechanism sets a limit on the maximum polarization of emitted electrons. The initial polarization can be increased by choosing structures with a higher valence band splitting.
Keywords	Electron emission Superlattices Polarized beams Indium arsenides Aluminium arsenides Gallium arsenides Gallium phosphides Strains Polarization Splitting Electron sources
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200508