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Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms.

DE2004826466

Publication Date	2003
Personal Author	Toney, M. F.
Page Count	18
Abstract	We report the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 2-10% oxygen causes a decrease in film resistance, while for thicker films there is a monotonic increase in resistivity. X-ray reflectivity measurements show significantly smoother films for these oxygen flow rates. X-ray diffraction shows that the oxygen doping causes a refinement of the copper grain size and the formation of cuprous oxide. We suggest that the formation of cuprous oxide limits copper grain growth, which causes smoother interfaces, and thus reduces resistivity by increasing specular scattering of electrons at interfaces.
Keywords	Thin films Copper Oxidation Resistivity Microstructures X-ray diffraction Scattering Interfaces Electrons Ions Beams
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200510

Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms.

Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms.
DE2004826466

Publication Date	2003
Personal Author	Toney, M. F.
Page Count	18
Abstract	We report the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 2-10% oxygen causes a decrease in film resistance, while for thicker films there is a monotonic increase in resistivity. X-ray reflectivity measurements show significantly smoother films for these oxygen flow rates. X-ray diffraction shows that the oxygen doping causes a refinement of the copper grain size and the formation of cuprous oxide. We suggest that the formation of cuprous oxide limits copper grain growth, which causes smoother interfaces, and thus reduces resistivity by increasing specular scattering of electrons at interfaces.
Keywords	Thin films Copper Oxidation Resistivity Microstructures X-ray diffraction Scattering Interfaces Electrons Ions Beams
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Stanford Linear Accelerator Center, CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200510