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Proton Radiation Damage in High-Resistivity n-type Silicon CCDs.

DE2004826087

Publication Date	2004
Personal Author	Bebek, C. J.; Groom, D. E.; Holland, S. E.; Karcher, A.; Kolbe, W. F.; Lee, J.; Levi, M. E.
Page Count	16
Abstract	A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.
Keywords	Efficiency Protons Pumping High resistivity Radiation doses Radiations Silicon CCD radiation damage Proton radiation damage Silicon charge transfer efficiency
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200507

Proton Radiation Damage in High-Resistivity n-type Silicon CCDs.

Proton Radiation Damage in High-Resistivity n-type Silicon CCDs.
DE2004826087

Publication Date	2004
Personal Author	Bebek, C. J.; Groom, D. E.; Holland, S. E.; Karcher, A.; Kolbe, W. F.; Lee, J.; Levi, M. E.
Page Count	16
Abstract	A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.
Keywords	Efficiency Protons Pumping High resistivity Radiation doses Radiations Silicon CCD radiation damage Proton radiation damage Silicon charge transfer efficiency
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200507