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DE2004821870

Publication Date	2003
Personal Author	Wang, C. A.; Shiau, D. A.; Murphy, P. G.; O'Brien, P. W.; Huang, R. K.; Connors, M. K.; Anderson, A. C.; Belenky, G.; Donetsky, D.; Anikeev, S.; Depoy, D. M.
Page Count	24
Abstract	GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO(sub x)/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO(sub x)/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.
Keywords	Wafers Photovoltaics Bonding Gallium arsenides Adhesion Epitaxial growth
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200419

Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices.

Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices.
DE2004821870

Publication Date	2003
Personal Author	Wang, C. A.; Shiau, D. A.; Murphy, P. G.; O'Brien, P. W.; Huang, R. K.; Connors, M. K.; Anderson, A. C.; Belenky, G.; Donetsky, D.; Anikeev, S.; Depoy, D. M.
Page Count	24
Abstract	GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO(sub x)/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO(sub x)/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.
Keywords	Wafers Photovoltaics Bonding Gallium arsenides Adhesion Epitaxial growth
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200419