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Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices.


DE2004821862

Publication Date 2002
Personal Author Wang, C. A.; Vineis, C. J.; Choi, H. K.; Connors, M. K.; Huang, R. H.; Danielson, L. R.; Nichols, G.; Charache, G. W.; Donetsky, D.; Anikeev, S.; Bleneky, G.
Page Count 18
Abstract High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed.
Keywords
  • Carrier lifetime
  • Fill factors
  • Microstructure
  • Performance
  • Quantum efficiency
  • Thermophotovoltaic devices
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200420
Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices.
Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices.
DE2004821862

  • Carrier lifetime
  • Fill factors
  • Microstructure
  • Performance
  • Quantum efficiency
  • Thermophotovoltaic devices
  • Technical Information Center Oak Ridge Tennessee
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