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Growth of Uniform Ga(1-x)In(x)Sb Bulk Crystals by Self-Solute Feeding Technique.


DE2004821861

Publication Date 2002
Personal Author Dutta, P. S.; Rajagopalan, G.; Gutmann, R. J.; Nichols, G.
Page Count 20
Abstract Compositionally homogeneous, crack-free bulk crystals of Ga(sub 1-x)In(sub x)Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition.
Keywords
  • Crystal growth
  • Gallium alloys
  • Solutes
  • Feeding
  • Composition
  • Microstructure
  • Self solute feeding method
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200419
Growth of Uniform Ga(1-x)In(x)Sb Bulk Crystals by Self-Solute Feeding Technique.
Growth of Uniform Ga(1-x)In(x)Sb Bulk Crystals by Self-Solute Feeding Technique.
DE2004821861

  • Crystal growth
  • Gallium alloys
  • Solutes
  • Feeding
  • Composition
  • Microstructure
  • Self solute feeding method
  • Technical Information Center Oak Ridge Tennessee
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