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Generation of Compositionally Graded Ga(1-x)In(x)Sb Seed by Solute Diffusion.

DE2004821859

Publication Date	2002
Personal Author	Dutta, P. S.; Rajagopalan, G.; Gutmann, R. J.; Nichols, G.
Page Count	16
Abstract	Compositionally graded single crystalline<100> seed of Ga(sub 1-x)In(sub x)Sb has been grown in a single experiment using a solute diffusion method. The present technique is simple and less time consuming compared to the conventional boot-strapping approach previously used for generating ternary seeds. Starting from an InSb<100> single crystalline seed, a seed of Ga(sub 0.6)In(sub 0.4)Sb has been grown. The effect of temperature gradient on the crystalline quality of seeds grown using this method has been discussed.
Keywords	Crystal growth Ternary systems Semiconductors Single crystals Diffusion Substrates Schematic diagrams Temperature gradients Lattice dynamics Thermophotvolatic (TPV) cells Crystalline seed Solute diffusion methods Ternary seed Band gap
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200425

Generation of Compositionally Graded Ga(1-x)In(x)Sb Seed by Solute Diffusion.

Generation of Compositionally Graded Ga(1-x)In(x)Sb Seed by Solute Diffusion.
DE2004821859

Publication Date	2002
Personal Author	Dutta, P. S.; Rajagopalan, G.; Gutmann, R. J.; Nichols, G.
Page Count	16
Abstract	Compositionally graded single crystalline<100> seed of Ga(sub 1-x)In(sub x)Sb has been grown in a single experiment using a solute diffusion method. The present technique is simple and less time consuming compared to the conventional boot-strapping approach previously used for generating ternary seeds. Starting from an InSb<100> single crystalline seed, a seed of Ga(sub 0.6)In(sub 0.4)Sb has been grown. The effect of temperature gradient on the crystalline quality of seeds grown using this method has been discussed.
Keywords	Crystal growth Ternary systems Semiconductors Single crystals Diffusion Substrates Schematic diagrams Temperature gradients Lattice dynamics Thermophotvolatic (TPV) cells Crystalline seed Solute diffusion methods Ternary seed Band gap
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200425