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Reduction of Micro-Cracks in Large Diameter InxGa1-xSb Bulk Crystals.

DE2004821510

Publication Date	2003
Personal Author	Vogel, J.; Dutta, P. S.
Page Count	12
Abstract	The ternary alloy, In(sub x)Ga(sub 1-x)Sb, is a compound semiconductor of tunable bandgap in the range of 0.18-0.72 eV, making it useful for infrared range optoelectronic devices. Utilizing a unique system based upon vertical Bridgman technique, large diameter (50 millimeter) In(sub x)Ga(sub 1-x)Sb polycrystals of composition ranging in x from 0.015 to 0.988 were grown. Methods of mixing the melt during solidification, including the accelerated crucible rotation technique (ACRT), have been used in conjunction with optimization of the furnace temperature gradient profile to significantly reduce micro-cracking in the crystal boules while accelerating the growth rate from less than a millimeter per hour to three millimeters per hour. In this paper, the experimental system and crystal growth parameters for a set of ternary experiments will be detailed.
Keywords	Alloys Crystal growth Cross sections Semiconductors Ternary Crucibles Furnaces Microscopy Optimization Polycrystals Probes Removal Rotation Solidification Temperature gradients
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200417

Reduction of Micro-Cracks in Large Diameter InxGa1-xSb Bulk Crystals.

Reduction of Micro-Cracks in Large Diameter InxGa1-xSb Bulk Crystals.
DE2004821510

Publication Date	2003
Personal Author	Vogel, J.; Dutta, P. S.
Page Count	12
Abstract	The ternary alloy, In(sub x)Ga(sub 1-x)Sb, is a compound semiconductor of tunable bandgap in the range of 0.18-0.72 eV, making it useful for infrared range optoelectronic devices. Utilizing a unique system based upon vertical Bridgman technique, large diameter (50 millimeter) In(sub x)Ga(sub 1-x)Sb polycrystals of composition ranging in x from 0.015 to 0.988 were grown. Methods of mixing the melt during solidification, including the accelerated crucible rotation technique (ACRT), have been used in conjunction with optimization of the furnace temperature gradient profile to significantly reduce micro-cracking in the crystal boules while accelerating the growth rate from less than a millimeter per hour to three millimeters per hour. In this paper, the experimental system and crystal growth parameters for a set of ternary experiments will be detailed.
Keywords	Alloys Crystal growth Cross sections Semiconductors Ternary Crucibles Furnaces Microscopy Optimization Polycrystals Probes Removal Rotation Solidification Temperature gradients
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lockheed Martin Electronics Labs., Syracuse, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200417