National Technical Reports Library - NTRL

National Technical Reports Library


Details
Actions:
Download PDFDownload XML
Download

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.


DE2004821380

Publication Date 2003
Personal Author Wang, C. A.; Shiau, D. A.; Huang, R. K.; Harris, C. T.; Connors, M. K.
Page Count 18
Abstract A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10(sup 18) cm(sup -3) for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10(sup -5)(Omega)-cm(sup 2) for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10(sup -6)(Omega)-cm(sup 2) for n-GaInAsSb was measured.
Keywords
  • Ohmic contacts
  • Doping
  • Mass spectroscopy
  • Electron mobility
  • Epilayers
  • Comparisons
  • Electrons
  • Low resistance
  • Vapor phase epitaxy
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200413
Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.
Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.
DE2004821380

  • Ohmic contacts
  • Doping
  • Mass spectroscopy
  • Electron mobility
  • Epilayers
  • Comparisons
  • Electrons
  • Low resistance
  • Vapor phase epitaxy
  • Technical Information Center Oak Ridge Tennessee
Loading