National Technical Reports Library

The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

Details

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.

DE2004821380

Publication Date	2003
Personal Author	Wang, C. A.; Shiau, D. A.; Huang, R. K.; Harris, C. T.; Connors, M. K.
Page Count	18
Abstract	A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10(sup 18) cm(sup -3) for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10(sup -5)(Omega)-cm(sup 2) for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10(sup -6)(Omega)-cm(sup 2) for n-GaInAsSb was measured.
Keywords	Ohmic contacts Doping Mass spectroscopy Electron mobility Epilayers Comparisons Electrons Low resistance Vapor phase epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts.
DE2004821380

Publication Date	2003
Personal Author	Wang, C. A.; Shiau, D. A.; Huang, R. K.; Harris, C. T.; Connors, M. K.
Page Count	18
Abstract	A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10(sup 18) cm(sup -3) for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10(sup -5)(Omega)-cm(sup 2) for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10(sup -6)(Omega)-cm(sup 2) for n-GaInAsSb was measured.
Keywords	Ohmic contacts Doping Mass spectroscopy Electron mobility Epilayers Comparisons Electrons Low resistance Vapor phase epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413