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Measurement of the Auger Recombination Rate in p-Type 0.54-eV GaInAsSb by Time-Resolved Photoluminence.

DE2004821378

Publication Date	2003
Personal Author	Anikeev, S.; Donetsky, D.; Belenky, G.; Luryi, S.; Wang, C. A.; Borrego, J. M.; Nichols, G.
Page Count	22
Abstract	Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3 x 10(sup -28) cm(sup 6)/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.
Keywords	Measurements Alloys Decay Electrons Lifetime Performance Spin Substrates Valence Vapor phase epitaxy Time resolved photoluminescence Auger recombination rates
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	State Univ. of New York at Stony Brook.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Rensselaer Polytechnic Inst., Troy, NY.; Department of Energy, Washington, DC.; Lockheed Martin Electronics Labs., Syracuse, NY.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab., Rensselaer Polytechnic Inst., Troy, NY. and Lockheed Martin Electronics Labs., Syracuse, NY. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413

Measurement of the Auger Recombination Rate in p-Type 0.54-eV GaInAsSb by Time-Resolved Photoluminence.

Measurement of the Auger Recombination Rate in p-Type 0.54-eV GaInAsSb by Time-Resolved Photoluminence.
DE2004821378

Publication Date	2003
Personal Author	Anikeev, S.; Donetsky, D.; Belenky, G.; Luryi, S.; Wang, C. A.; Borrego, J. M.; Nichols, G.
Page Count	22
Abstract	Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3 x 10(sup -28) cm(sup 6)/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.
Keywords	Measurements Alloys Decay Electrons Lifetime Performance Spin Substrates Valence Vapor phase epitaxy Time resolved photoluminescence Auger recombination rates
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	State Univ. of New York at Stony Brook.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Rensselaer Polytechnic Inst., Troy, NY.; Department of Energy, Washington, DC.; Lockheed Martin Electronics Labs., Syracuse, NY.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab., Rensselaer Polytechnic Inst., Troy, NY. and Lockheed Martin Electronics Labs., Syracuse, NY. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413