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Recombination Parameters in InGaSb Epitaxial Layers for Thermophotovoltaic Applications.

DE2004821373

Publication Date	2003
Personal Author	Kumar, R. J.; Gutmann, R. J.; Borrego, J. M.; Dutta, P. S.; Wang, C. A.; Martinelli, R. U.; Nichols, G.
Page Count	12
Abstract	Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10(sup 17) cm(sup -3) doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10(sup -11) cm(sup 3)/s and Auger coefficient (C) of 1 x 10(sup -28) cm(sup 6)/s.
Keywords	Thermophotovoltaics Engineering Velocity Simulaitons Measurements Applications Recombination parameters Epitaxial layers One-dimensional device simulations Radio frequency photoreflectance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Rensselaer Polytechnic Inst., Troy, NY. Center for Integrated Electronics.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.; Lockheed Martin Electronics Labs., Syracuse, NY.; Sarnoff Corp., Princeton, NJ.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab., Sarnoff Corp., Princeton, NJ. and Lockheed Martin Electronics Labs., Syracuse, NY. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413

Recombination Parameters in InGaSb Epitaxial Layers for Thermophotovoltaic Applications.

Recombination Parameters in InGaSb Epitaxial Layers for Thermophotovoltaic Applications.
DE2004821373

Publication Date	2003
Personal Author	Kumar, R. J.; Gutmann, R. J.; Borrego, J. M.; Dutta, P. S.; Wang, C. A.; Martinelli, R. U.; Nichols, G.
Page Count	12
Abstract	Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10(sup 17) cm(sup -3) doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10(sup -11) cm(sup 3)/s and Auger coefficient (C) of 1 x 10(sup -28) cm(sup 6)/s.
Keywords	Thermophotovoltaics Engineering Velocity Simulaitons Measurements Applications Recombination parameters Epitaxial layers One-dimensional device simulations Radio frequency photoreflectance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Rensselaer Polytechnic Inst., Troy, NY. Center for Integrated Electronics.; Massachusetts Inst. of Tech., Lexington. Lincoln Lab.; Department of Energy, Washington, DC.; Lockheed Martin Electronics Labs., Syracuse, NY.; Sarnoff Corp., Princeton, NJ.
Supplemental Notes	Prepared in cooperation with Massachusetts Inst. of Tech., Lexington. Lincoln Lab., Sarnoff Corp., Princeton, NJ. and Lockheed Martin Electronics Labs., Syracuse, NY. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200413