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Selective Control of Chemical Reactions with Plasmas. Period Covered: August 15, 2000 to January 31, 2004.

DE2004820945

Publication Date	2004
Personal Author	Muscat, A.
Page Count	30
Abstract	OAK-B135 This research work focused on control of the reactive species inside a plasma through measurement and manipulation of the electron energy distribution function (EEDF) and on understanding the surface reaction mechanisms on the substrate exposed to a combination of ion and atom beam sources to simulate a real plasma. A GEC chamber (Gaseous Electronic Conference Reference Cell)8 with a mass spectrometer and a Langmuir probe (LP) system were used for this research. It was found that H2 and N2 additives to an Ar plasma could effectively change the EEDF and the average electron temperature (Te). This finding provides the possibility to selectively control reaction rates in the plasma to control etching selectivity on a surface. This concept was demonstrated in Ar/N2/H2 and Ar/CH4 /H2 systems.
Keywords	Plasmas Chemical reactions Electron temperature Electrons Energy spectra Etching Langmuir probe Reaction kinetics Substrates Mass spectrometers Selective control Low temperature plasmas
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Arizona Univ., Tucson. Dept. of Chemical and Environmental Engineering.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200507

Selective Control of Chemical Reactions with Plasmas. Period Covered: August 15, 2000 to January 31, 2004.

Selective Control of Chemical Reactions with Plasmas. Period Covered: August 15, 2000 to January 31, 2004.
DE2004820945

Publication Date	2004
Personal Author	Muscat, A.
Page Count	30
Abstract	OAK-B135 This research work focused on control of the reactive species inside a plasma through measurement and manipulation of the electron energy distribution function (EEDF) and on understanding the surface reaction mechanisms on the substrate exposed to a combination of ion and atom beam sources to simulate a real plasma. A GEC chamber (Gaseous Electronic Conference Reference Cell)8 with a mass spectrometer and a Langmuir probe (LP) system were used for this research. It was found that H2 and N2 additives to an Ar plasma could effectively change the EEDF and the average electron temperature (Te). This finding provides the possibility to selectively control reaction rates in the plasma to control etching selectivity on a surface. This concept was demonstrated in Ar/N2/H2 and Ar/CH4 /H2 systems.
Keywords	Plasmas Chemical reactions Electron temperature Electrons Energy spectra Etching Langmuir probe Reaction kinetics Substrates Mass spectrometers Selective control Low temperature plasmas
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Arizona Univ., Tucson. Dept. of Chemical and Environmental Engineering.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200507