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AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy.


DE2004820701

Publication Date 2002
Personal Author Wang, C. A.; Vineiso, C. J.; Calawa, D. R.
Page Count 14
Abstract The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.
Keywords
  • Bragg reflection
  • Vapor phase epitaxy
  • Aluminum arsenides
  • Gallium arsenides
  • Gallium antimonides
  • Antimonides
  • Aluminum compounds
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Lockheed Martin Electronics Labs., Syracuse, NY.; Rensselaer Polytechnic Inst., Troy, NY. Dept. of Nuclear Engineering.; Department of Energy, Washington, DC.
Supplemental Notes Prepared in cooperation with Rensselaer Polytechnic Inst., Troy, NY. Dept. of Nuclear Engineering. Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200413
AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy.
AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy.
DE2004820701

  • Bragg reflection
  • Vapor phase epitaxy
  • Aluminum arsenides
  • Gallium arsenides
  • Gallium antimonides
  • Antimonides
  • Aluminum compounds
  • Technical Information Center Oak Ridge Tennessee
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