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Distribution and Chemical State of Cu-rich Clusters in Silicon.

DE200415009893

Publication Date	2004
Personal Author	Buonassisi, T.; Istratov, A. A.; Weber, E. R.; Marcus, M. A.; Heuer, M.; Ciszek, T. F.; Lai, B.; Cai, Z.
Page Count	12
Abstract	The chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
Keywords	Silicon solar cells Crystal growth Impurities Absorption Contamination Solar energy Microelectronics Passivation
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Argonne National Lab., IL.; Department of Energy, Washington, DC.; National Renewable Energy Lab., Golden, CO.; University of Leipzig, Germany.
Supplemental Notes	Prepared in cooperation with University of Leipzig, Germany., National Renewable Energy Lab., Golden, CO. and Argonne National Lab., IL. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200516

Distribution and Chemical State of Cu-rich Clusters in Silicon.

Distribution and Chemical State of Cu-rich Clusters in Silicon.
DE200415009893

Publication Date	2004
Personal Author	Buonassisi, T.; Istratov, A. A.; Weber, E. R.; Marcus, M. A.; Heuer, M.; Ciszek, T. F.; Lai, B.; Cai, Z.
Page Count	12
Abstract	The chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
Keywords	Silicon solar cells Crystal growth Impurities Absorption Contamination Solar energy Microelectronics Passivation
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Lawrence Berkeley National Lab., CA.; Argonne National Lab., IL.; Department of Energy, Washington, DC.; National Renewable Energy Lab., Golden, CO.; University of Leipzig, Germany.
Supplemental Notes	Prepared in cooperation with University of Leipzig, Germany., National Renewable Energy Lab., Golden, CO. and Argonne National Lab., IL. Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200516