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Ti-Cr-Al-O Thin Film Resistors.


DE200415006122

Publication Date 2002
Personal Author Jankowski, A. F.; Hayes, J. P.
Page Count 24
Abstract Thin films of Ti-Cr-Al-O are produced for use as an electrical resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O(sub 2). Vertical resistivity values from 10(sup 4) to 10(sup 10) Ohm-cm are measured for Ti-Cr-Al-O films. The film resistivity can be design selected through control of the target composition and the deposition parameters. The Ti-Cr-Al-O thin film resistor is found to be thermally stable unlike other metal-oxide films.
Keywords
  • Ceramics
  • Resistors
  • Coatings
  • Sputtering
  • Targets
  • Thin films
  • Deposition
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors Lawrence Livermore National Lab., CA.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200413
Ti-Cr-Al-O Thin Film Resistors.
Ti-Cr-Al-O Thin Film Resistors.
DE200415006122

  • Ceramics
  • Resistors
  • Coatings
  • Sputtering
  • Targets
  • Thin films
  • Deposition
  • Technical Information Center Oak Ridge Tennessee
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