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Development of a High-Rate, High-Resolution Detector for EXAFS Experiments.

DE2003807517

Publication Date	2002
Personal Author	De Geronimo, G.; O'Connor, P.; Beuttenmuller, R. H.; Li, Z.; Kuczewski, A. J.; Siddons, D. P.
Page Count	12
Abstract	A new detector for EXAFS experiments is being developed. It is based on a multi-element Si sensor and dedicated readout ASICs. The sensor is composed of 384 pixels, each having 1 mm(sup 2) area, arranged in four quadrants of 12 x 8 elements, and wire-bonded to 32-channel front-end ASICs. Each channel implements low noise preamplification with self-adaptive continuous reset, high order shaper, band-gap referenced baseline stabilizer, one threshold comparator and two DAC adjustable window comparators, each followed by a 24-bit counter. Fabricated in 0.35(micro)m CMOS dissipates about 8mW per channel. First measurements show at room temperature a resolution of 14 rms electrons without the detector and of 40 rms electrons (340eV) with the detector connected and biased. Cooling at -35C a FWHM of 205eV (167eV from electronics) was measured at the Mn-K(alpha) line. A resolution of about 300eV was measured for rates approaching 100kcps/cm(sup 2) per channel, corresponding to an overall rate in excess of 10MHz/cm(sup 2). A channel-to-channel threshold dispersion after DACs adjustment of 2.5 rms electrons was also measured.
Keywords	X ray spectroscopy Si semiconductor detectors X ray absorption Absorption Electrons X ray detection Spectroscopy X ray spectrometers Design Performance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Brookhaven National Lab., Upton, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200321

Development of a High-Rate, High-Resolution Detector for EXAFS Experiments.

Development of a High-Rate, High-Resolution Detector for EXAFS Experiments.
DE2003807517

Publication Date	2002
Personal Author	De Geronimo, G.; O'Connor, P.; Beuttenmuller, R. H.; Li, Z.; Kuczewski, A. J.; Siddons, D. P.
Page Count	12
Abstract	A new detector for EXAFS experiments is being developed. It is based on a multi-element Si sensor and dedicated readout ASICs. The sensor is composed of 384 pixels, each having 1 mm(sup 2) area, arranged in four quadrants of 12 x 8 elements, and wire-bonded to 32-channel front-end ASICs. Each channel implements low noise preamplification with self-adaptive continuous reset, high order shaper, band-gap referenced baseline stabilizer, one threshold comparator and two DAC adjustable window comparators, each followed by a 24-bit counter. Fabricated in 0.35(micro)m CMOS dissipates about 8mW per channel. First measurements show at room temperature a resolution of 14 rms electrons without the detector and of 40 rms electrons (340eV) with the detector connected and biased. Cooling at -35C a FWHM of 205eV (167eV from electronics) was measured at the Mn-K(alpha) line. A resolution of about 300eV was measured for rates approaching 100kcps/cm(sup 2) per channel, corresponding to an overall rate in excess of 10MHz/cm(sup 2). A channel-to-channel threshold dispersion after DACs adjustment of 2.5 rms electrons was also measured.
Keywords	X ray spectroscopy Si semiconductor detectors X ray absorption Absorption Electrons X ray detection Spectroscopy X ray spectrometers Design Performance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Brookhaven National Lab., Upton, NY.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200321