National Technical Reports Library

The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

Details

Critical Phenomena of the Disorder Driven Localization-Delocalization Transition.

DE2003804162

Publication Date	2001
Personal Author	Ruehlaender, M.
Page Count	52
Abstract	Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T(sub c) superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given.
Keywords	Superconductors Thesis Symmetry Conductance Boundary conditions Anisotropy Energy levels Wave functions
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Iowa State Univ., Ames.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200313

Critical Phenomena of the Disorder Driven Localization-Delocalization Transition.

Critical Phenomena of the Disorder Driven Localization-Delocalization Transition.
DE2003804162

Publication Date	2001
Personal Author	Ruehlaender, M.
Page Count	52
Abstract	Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T(sub c) superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given.
Keywords	Superconductors Thesis Symmetry Conductance Boundary conditions Anisotropy Energy levels Wave functions
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Iowa State Univ., Ames.; Department of Energy, Washington, DC.
Supplemental Notes	Sponsored by Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200313