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Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched.


DE200215000982

Publication Date 2002
Personal Author Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.
Page Count 12
Abstract No abstract available.
Keywords
  • Semiconductors
  • Gallium arsenides
  • Molecular beam epitaxy
  • Crystal lattices
  • Transients
  • Spectroscopy
  • Nitrogen
  • Deep level transient spectroscopy
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 200310
Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched.
Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched.
DE200215000982

  • Semiconductors
  • Gallium arsenides
  • Molecular beam epitaxy
  • Crystal lattices
  • Transients
  • Spectroscopy
  • Nitrogen
  • Deep level transient spectroscopy
  • Technical Information Center Oak Ridge Tennessee
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