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DE200215000712

Publication Date	2002
Personal Author	Rozgonyi, G. A.; Aroui, A.; Omanowski, A.; Ordas, L.
Page Count	33
Abstract	This report describes two project objectives: to determine optical and gettering properties of titanium and titanium oxy-nitride films, and to examine the influence of carrier recombination processes on the microwave reflection coefficient in the frequency domain such that PV materials parameters could be evaluated nondestructively. A third topic was added as the main focus, wherein we carried out a detailed characterization study of dislocated, high-purity, float-zone crystals grown at NREL. These crystalswere compared with nitrogen-doped CZ wafers. The accompanying report has a chapter devoted to each of these topics: (1) characterization of controlled defect/impurity growth of float-zone crystals; (2) contactless characterization of silicon wafers using frequency-resolved photoconductance decay; and (3) gettering and surface reflectivity of Ti thin films.
Keywords	Getters Photovoltaics Solar energy Titanium Carrier recombination Float-zone crystals Microwaves Thin films Photoconductors Minority carrier Silicon wafers Schottky barrier Optical bandgap Wavelength reflectance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200225
Contract Number	AC36-99-GO10337

Characterization of and Ti Gettering for PV Substrates: Final Subcontract Report; 28 January 1998 - 28 August 2001.

Characterization of and Ti Gettering for PV Substrates: Final Subcontract Report; 28 January 1998 - 28 August 2001.
DE200215000712

Publication Date	2002
Personal Author	Rozgonyi, G. A.; Aroui, A.; Omanowski, A.; Ordas, L.
Page Count	33
Abstract	This report describes two project objectives: to determine optical and gettering properties of titanium and titanium oxy-nitride films, and to examine the influence of carrier recombination processes on the microwave reflection coefficient in the frequency domain such that PV materials parameters could be evaluated nondestructively. A third topic was added as the main focus, wherein we carried out a detailed characterization study of dislocated, high-purity, float-zone crystals grown at NREL. These crystalswere compared with nitrogen-doped CZ wafers. The accompanying report has a chapter devoted to each of these topics: (1) characterization of controlled defect/impurity growth of float-zone crystals; (2) contactless characterization of silicon wafers using frequency-resolved photoconductance decay; and (3) gettering and surface reflectivity of Ti thin films.
Keywords	Getters Photovoltaics Solar energy Titanium Carrier recombination Float-zone crystals Microwaves Thin films Photoconductors Minority carrier Silicon wafers Schottky barrier Optical bandgap Wavelength reflectance
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200225
Contract Number	AC36-99-GO10337