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Silicon Crystal Growth and Wafer Processing for High Efficiency Solar Cells and High Mechanical Yield: Preprint.


DE200215000069

Publication Date 2001
Personal Author Karoui, A.
Page Count 4
Abstract Presented at the 2001 NCPV Program Review Meeting: Preliminary work on a novel process for external gettering by creating a band of silicon dioxide precipitation on top of a denuded zone via nitrogen doping is presented.
Keywords
  • Meetings
  • Crystal growth
  • Silicon dioxide
  • Precipitation
  • Carrier lifetime
  • Doping
  • Nitrogen
  • Defects
  • Crystallization
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type Conference Proceedings
NTIS Issue Number 200212
Contract Number
  • AC36-99-GO10337
Silicon Crystal Growth and Wafer Processing for High Efficiency Solar Cells and High Mechanical Yield: Preprint.
Silicon Crystal Growth and Wafer Processing for High Efficiency Solar Cells and High Mechanical Yield: Preprint.
DE200215000069

  • Meetings
  • Crystal growth
  • Silicon dioxide
  • Precipitation
  • Carrier lifetime
  • Doping
  • Nitrogen
  • Defects
  • Crystallization
  • Technical Information Center Oak Ridge Tennessee
  • AC36-99-GO10337
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