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Real-Time Characterization of Hot-Wire CVD Growth of Si:H Films using Spectroscopic Ellipsometry: Preprint.


DE200215000068

Publication Date 2001
Personal Author Levi, D.
Page Count 4
Abstract Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
Keywords
  • Meetings
  • Thin films
  • Silicon
  • Chemical vapor deposition
  • Ellipsometers
  • Characterization
  • Morphology
  • Hydrogen
  • Surface roughness
  • Real-time spectroscopic ellipsometry
  • Raman scattering measurements
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type Conference Proceedings
NTIS Issue Number 200212
Contract Number
  • AC36-99-GO10337
Real-Time Characterization of Hot-Wire CVD Growth of Si:H Films using Spectroscopic Ellipsometry: Preprint.
Real-Time Characterization of Hot-Wire CVD Growth of Si:H Films using Spectroscopic Ellipsometry: Preprint.
DE200215000068

  • Meetings
  • Thin films
  • Silicon
  • Chemical vapor deposition
  • Ellipsometers
  • Characterization
  • Morphology
  • Hydrogen
  • Surface roughness
  • Real-time spectroscopic ellipsometry
  • Raman scattering measurements
  • Technical Information Center Oak Ridge Tennessee
  • AC36-99-GO10337
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