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Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint.


DE200215000060

Publication Date 2001
Personal Author Johnston, S. W.
Page Count 4
Abstract Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.
Keywords
  • Meetings
  • Photovoltaic cells
  • Carrier lifetime
  • Gallium nitrides
  • Gallium arsenides
  • Recombination
  • Lifetime
  • Temperature dependence
  • Photoconductivity
  • Solar cells
  • Decay
  • Photoconductive decay
Source Agency
  • Technical Information Center Oak Ridge Tennessee
Corporate Authors National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type Conference Proceedings
NTIS Issue Number 200212
Contract Number
  • AC36-99-GO10337
Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint.
Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint.
DE200215000060

  • Meetings
  • Photovoltaic cells
  • Carrier lifetime
  • Gallium nitrides
  • Gallium arsenides
  • Recombination
  • Lifetime
  • Temperature dependence
  • Photoconductivity
  • Solar cells
  • Decay
  • Photoconductive decay
  • Technical Information Center Oak Ridge Tennessee
  • AC36-99-GO10337
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