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Solution Deposition Approaches To Coated Conductor Fabrication on Biaxially Textured Ni-W Alloy Substrates.

DE2001787473

Publication Date	2001
Personal Author	Sathyamurthy, S.
Page Count	3
Abstract	Sol-gel processing of La(sub 2)Zr(sub 2)O(sub 7) (LZO) was used to process buffer layers on biaxially textured Ni-3 at.%W substrates. A reel-to-reel continuous dip-coating unit was used to deposit the solution buffers. Epitaxial LZO films have been obtained through continuous processing on Ni-3 at.%W substrates with strong texture and uniform microstructure. The carbon content in these films were analyzed using proton resonance Rutherford Backscattering (RBS). The process parameters have been modified so as to study the effect of the carbon content in these films towards further growth of YBCO films with better properties. The LZO buffers were used as seed layers for RABiTS with the architecture of CeO(sub 2)/YSZ/LZO/Ni-3 at.%W, and YBCO films with critical current density (J(sub c)) of 1.9 MA/cm(sup 2) at 77K in self-field, and a J(sub c) of 0.34 MA/cm(sup 2) at 0.5 T, have been obtained.
Keywords	Sol-gel process Lanthanum oxides Zirconium oxides Nickel base alloys Tungsten alloys Critical current Dip coating Fabrication Substrates Superconductivity Texture Microstructure Cerium oxides Yttrium oxides Barium oxides Copper oxides
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Oak Ridge National Lab., TN.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200204
Contract Number	AC05-00OR22725

Solution Deposition Approaches To Coated Conductor Fabrication on Biaxially Textured Ni-W Alloy Substrates.

Solution Deposition Approaches To Coated Conductor Fabrication on Biaxially Textured Ni-W Alloy Substrates.
DE2001787473

Publication Date	2001
Personal Author	Sathyamurthy, S.
Page Count	3
Abstract	Sol-gel processing of La(sub 2)Zr(sub 2)O(sub 7) (LZO) was used to process buffer layers on biaxially textured Ni-3 at.%W substrates. A reel-to-reel continuous dip-coating unit was used to deposit the solution buffers. Epitaxial LZO films have been obtained through continuous processing on Ni-3 at.%W substrates with strong texture and uniform microstructure. The carbon content in these films were analyzed using proton resonance Rutherford Backscattering (RBS). The process parameters have been modified so as to study the effect of the carbon content in these films towards further growth of YBCO films with better properties. The LZO buffers were used as seed layers for RABiTS with the architecture of CeO(sub 2)/YSZ/LZO/Ni-3 at.%W, and YBCO films with critical current density (J(sub c)) of 1.9 MA/cm(sup 2) at 77K in self-field, and a J(sub c) of 0.34 MA/cm(sup 2) at 0.5 T, have been obtained.
Keywords	Sol-gel process Lanthanum oxides Zirconium oxides Nickel base alloys Tungsten alloys Critical current Dip coating Fabrication Substrates Superconductivity Texture Microstructure Cerium oxides Yttrium oxides Barium oxides Copper oxides
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Oak Ridge National Lab., TN.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200204
Contract Number	AC05-00OR22725