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Photonics Integration Devices and Technologies.

DE2001780313

Publication Date	2001
Personal Author	Vawter, G. A.; Lin, S. Y.; Sullivan, C. T.; Zubrzycki, W. J.; Chow, W. W.
Page Count	35
Abstract	We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.
Keywords	Aluminium arsenides Gallium arsenides Etching Oxidation Semiconductor lasers Waveguides Integrated circuits Photoelectric effect Doped materials Miniaturization
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200125
Contract Number	AC04-94AL85000

Photonics Integration Devices and Technologies.

Photonics Integration Devices and Technologies.
DE2001780313

Publication Date	2001
Personal Author	Vawter, G. A.; Lin, S. Y.; Sullivan, C. T.; Zubrzycki, W. J.; Chow, W. W.
Page Count	35
Abstract	We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.
Keywords	Aluminium arsenides Gallium arsenides Etching Oxidation Semiconductor lasers Waveguides Integrated circuits Photoelectric effect Doped materials Miniaturization
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200125
Contract Number	AC04-94AL85000