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Details

Comparison of Module Performance Characterization Methods for Energy Production.

DE2001772437

Publication Date	2000
Personal Author	Kroposki, B.; Marion, W.; King, D.; Boyson, W.; Kratochvil, J.
Page Count	62
Abstract	This report compares the two methods of determining the performance of PV modules. The methods translate module performance characterized in a laboratory to actual or reference conditions using slightly different approaches. The accuracy of both methods is compared for both hourly and daily energy production over a year of data recorded at NREL in Golden, CO. The comparison of the two methods will be presented for five different PV module technologies: multicrystalline silicon (mc-Si), dual-junction amorphous silicon (a-Si/a-Si:Ge), triple-junction amorphous silicon (a-Si/a-Si/a-Si:Ge), cadmium telluride (CdTe), and copper indium diselenide (CIGSS).
Keywords	Cadmium tellurides Copper Silicon Accuracy Indium Performance Production
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200124
Contract Number	AC36-99GO10337

Comparison of Module Performance Characterization Methods for Energy Production.

Comparison of Module Performance Characterization Methods for Energy Production.
DE2001772437

Publication Date	2000
Personal Author	Kroposki, B.; Marion, W.; King, D.; Boyson, W.; Kratochvil, J.
Page Count	62
Abstract	This report compares the two methods of determining the performance of PV modules. The methods translate module performance characterized in a laboratory to actual or reference conditions using slightly different approaches. The accuracy of both methods is compared for both hourly and daily energy production over a year of data recorded at NREL in Golden, CO. The comparison of the two methods will be presented for five different PV module technologies: multicrystalline silicon (mc-Si), dual-junction amorphous silicon (a-Si/a-Si:Ge), triple-junction amorphous silicon (a-Si/a-Si/a-Si:Ge), cadmium telluride (CdTe), and copper indium diselenide (CIGSS).
Keywords	Cadmium tellurides Copper Silicon Accuracy Indium Performance Production
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	National Renewable Energy Lab., Golden, CO.; Department of Energy, Washington, DC.
Document Type	Technical Report
NTIS Issue Number	200124
Contract Number	AC36-99GO10337