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Characterization of Epitaxial Growth of Semiconducting Rhemium 'Disilicide' Films.

DE2001763325

Publication Date	2000
Personal Author	Misra, A.; Verdier, M.; Mitchell, T. E.; Mahan, J. E.
Page Count	9
Abstract	We have characterized, through transmission electron microscopy (TEM), the ReSi(sub 2-x) thin films grown by reactive deposition on (001) Si. ReSi(sub 2.x) thin films exhibit a distorted body-centered tetragonal MoSi(sub 2)-type structure, and have excellent epitaxy on (001) Si since the face diagonal of the Si unit cell is equal to the c lattice parameter of silicide. The Si-deficient composition in the 'disilicide' may be accommodated by collapse and shear of missing Si planes to form planar faults. Kirkendall voids are also observed at the film-substrate interface. The engineering of the defect and interface structures of these complex, non-stoichiometric silicides for optimized optoelectronic properties are discussed.
Keywords	Epitaxial growth Semiconductor materials Rhenium silicides Epitaxy Crystal growth
Source Agency	Technical Information Center Oak Ridge Tennessee
NTIS Subject Category	49H - Semiconductor Devices
Corporate Authors	Los Alamos National Lab., NM.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200124
Contract Number	W-7405-ENG-36

Characterization of Epitaxial Growth of Semiconducting Rhemium 'Disilicide' Films.

Characterization of Epitaxial Growth of Semiconducting Rhemium 'Disilicide' Films.
DE2001763325

Publication Date	2000
Personal Author	Misra, A.; Verdier, M.; Mitchell, T. E.; Mahan, J. E.
Page Count	9
Abstract	We have characterized, through transmission electron microscopy (TEM), the ReSi(sub 2-x) thin films grown by reactive deposition on (001) Si. ReSi(sub 2.x) thin films exhibit a distorted body-centered tetragonal MoSi(sub 2)-type structure, and have excellent epitaxy on (001) Si since the face diagonal of the Si unit cell is equal to the c lattice parameter of silicide. The Si-deficient composition in the 'disilicide' may be accommodated by collapse and shear of missing Si planes to form planar faults. Kirkendall voids are also observed at the film-substrate interface. The engineering of the defect and interface structures of these complex, non-stoichiometric silicides for optimized optoelectronic properties are discussed.
Keywords	Epitaxial growth Semiconductor materials Rhenium silicides Epitaxy Crystal growth
Source Agency	Technical Information Center Oak Ridge Tennessee
NTIS Subject Category	49H - Semiconductor Devices
Corporate Authors	Los Alamos National Lab., NM.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200124
Contract Number	W-7405-ENG-36