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Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition.

DE2001760773

Publication Date	2000
Personal Author	Biefeld, R. M.; Cederberg, J. G.; Peake, G. M.; Kurtz, S. R.
Page Count	17
Abstract	The growth conditions for GaInAsSb and A1GaAsSb using metal-organic chemical vapor deposition in a high speed rotating disk reactor are described. Trimethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used the for the growth of A1GaSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperature of 520degC was determined for the growth of A1GaAsSb. Growth at this temperature yielded a root mean square (rms) surface roughness of 0.142 nm. A1GaAsSb could be grown over the range of 500 to 600deC with somewhat rougher surfaces (rms>0.7nm). The photoluminescence was found to correlate with surface roughness, increasing with smoother surfaces. A1GaAsSb mesa isolated diodes were prepared and characterized. These diodes showed good current-voltage characteristics with breakdown voltages greater than -6 volts.
Keywords	Chemical vapor deposition Crystal growth Epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200123
Contract Number	AC04-94AL85000

Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition.

Growth and Characterization of GaInAsSb and AlGaAsSb on GaSb by Metal Organic Chemical Vapor Deposition.
DE2001760773

Publication Date	2000
Personal Author	Biefeld, R. M.; Cederberg, J. G.; Peake, G. M.; Kurtz, S. R.
Page Count	17
Abstract	The growth conditions for GaInAsSb and A1GaAsSb using metal-organic chemical vapor deposition in a high speed rotating disk reactor are described. Trimethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used the for the growth of A1GaSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperature of 520degC was determined for the growth of A1GaAsSb. Growth at this temperature yielded a root mean square (rms) surface roughness of 0.142 nm. A1GaAsSb could be grown over the range of 500 to 600deC with somewhat rougher surfaces (rms>0.7nm). The photoluminescence was found to correlate with surface roughness, increasing with smoother surfaces. A1GaAsSb mesa isolated diodes were prepared and characterized. These diodes showed good current-voltage characteristics with breakdown voltages greater than -6 volts.
Keywords	Chemical vapor deposition Crystal growth Epitaxy
Source Agency	Technical Information Center Oak Ridge Tennessee
Corporate Authors	Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Document Type	Conference Proceedings
NTIS Issue Number	200123
Contract Number	AC04-94AL85000