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Solid State Lighting Program, Final Report, Advanced EPI Tools for Galium Nitride Light Emitting Diode Devices.


DE141150624

Publication Date 2012
Personal Author Patibandla, N.; Agrawal, V.; Dotson, B.
Page Count 33
Abstract Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the worlds largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs.
Keywords
  • Light emitting diodes
  • Lighting systems
  • Design
  • Gallium nitrides
  • Manufacturing
  • Silicon carbides
  • Solid state lighting
  • Templates
Source Agency
  • Technical Information Center Oak Ridge Tennessee
NTIS Subject Category
  • 49E - Optoelectronic Devices & Systems
  • 71 - Materials Sciences
  • 46 - Physics
Corporate Authors National Energy Technology Lab., Morgantown, WV.; Department of Energy, Washington, DC.
Supplemental Notes Sponsored by Department of Energy, Washington, DC.
Document Type Technical Report
NTIS Issue Number 201503
Contract Number
  • DE-EE0003331
Solid State Lighting Program, Final Report, Advanced EPI Tools for Galium Nitride Light Emitting Diode Devices.
Solid State Lighting Program, Final Report, Advanced EPI Tools for Galium Nitride Light Emitting Diode Devices.
DE141150624

  • Light emitting diodes
  • Lighting systems
  • Design
  • Gallium nitrides
  • Manufacturing
  • Silicon carbides
  • Solid state lighting
  • Templates
  • Technical Information Center Oak Ridge Tennessee
  • 49E - Optoelectronic Devices & Systems
  • 71 - Materials Sciences
  • 46 - Physics
  • DE-EE0003331
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