National Technical Reports Library

The National Technical Information Service acquires, indexes, abstracts, and archives the largest collection of U.S. government-sponsored technical reports in existence. The NTRL offers online, free and open access to these authenticated government technical reports. Technical reports and documents in its repository may be available online for free either from the issuing federal agency, the U.S. Government Publishing Office’s Federal Digital System website, or through search engines.

Details

Anti-Reflection Coating for Use with PMMA at 193 nm. (Reannouncement with New Availability Information).

ADA254416

Publication Date	1992
Personal Author	Yen, A.; Smith, H. I.; Schattenburg, M. L.; Taylor, G. N.
Page Count	5
Abstract	We have formulated an anti-reflection coating (ARC) for use with poly(methyl methacrylate) (PN ) resist for ArF excimer laser lithography (193 ran). It consists of Pb and a bis-azide, 4,4'-diazidodiphenyl sulfone (DDS) which cross-UW the film after deep UV (260 run) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. We have demonstrated the effectiveness of the ARC by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period ( approx. 50 ran linewidth) that are almost entirely free of an orthogonal standing wave.
Keywords	Coatings Annealing Availability Azides Excimers Films Irradiation Lasers Lithography Methacrylates Mixing Radiation Reflection Reprints Standing waves Sulfones Crosslinking(Chemistry) Gratings(Spectra) PMMA(Polymethyl Methacrylate) ARC(Anti-Reflection Coating) Spin-coating Sulfone/diazidodiphenyl
Source Agency	Army Non Paid Reprints
NTIS Subject Category	71E - Coatings, Colorants, & Finishes 71L - Materials Degradation & Fouling 99C - Polymer Chemistry 49 - Electrotechnology
Corporate Authors	Massachusetts Inst. of Tech., Cambridge. Research Lab. of Electronics.; Army Research Office, Research Triangle Park, NC.
Document Type	Journal Article
NTIS Issue Number	199604
Contract Number	DAAL03-92-C-0001

Anti-Reflection Coating for Use with PMMA at 193 nm. (Reannouncement with New Availability Information).

Anti-Reflection Coating for Use with PMMA at 193 nm. (Reannouncement with New Availability Information).
ADA254416

Publication Date	1992
Personal Author	Yen, A.; Smith, H. I.; Schattenburg, M. L.; Taylor, G. N.
Page Count	5
Abstract	We have formulated an anti-reflection coating (ARC) for use with poly(methyl methacrylate) (PN ) resist for ArF excimer laser lithography (193 ran). It consists of Pb and a bis-azide, 4,4'-diazidodiphenyl sulfone (DDS) which cross-UW the film after deep UV (260 run) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. We have demonstrated the effectiveness of the ARC by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period ( approx. 50 ran linewidth) that are almost entirely free of an orthogonal standing wave.
Keywords	Coatings Annealing Availability Azides Excimers Films Irradiation Lasers Lithography Methacrylates Mixing Radiation Reflection Reprints Standing waves Sulfones Crosslinking(Chemistry) Gratings(Spectra) PMMA(Polymethyl Methacrylate) ARC(Anti-Reflection Coating) Spin-coating Sulfone/diazidodiphenyl
Source Agency	Army Non Paid Reprints
NTIS Subject Category	71E - Coatings, Colorants, & Finishes 71L - Materials Degradation & Fouling 99C - Polymer Chemistry 49 - Electrotechnology
Corporate Authors	Massachusetts Inst. of Tech., Cambridge. Research Lab. of Electronics.; Army Research Office, Research Triangle Park, NC.
Document Type	Journal Article
NTIS Issue Number	199604
Contract Number	DAAL03-92-C-0001