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MM and T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.


ADA049129

Publication Date 1977
Personal Author Anand, Y.; Bakeman, P.
Page Count 68
Abstract X-band bulk limiters have been fabricated using high resistivity silicon rho = 15,000 ohm-cm. Bulk limiters from both the sources exhibited power handling capability of 15-25 kW but a cracking problem was experienced with one source of wafers. Batch process and ball-bonding processes have been introduced to manufacture the bulk limiters at a low cost with good yield. Various parameters are being optimized to achieve both bandwidth and RF power goals of the contract.
Keywords
  • Limiters
  • Bulk semiconductors
  • Production engineering
  • Fabrication
  • High power
  • X band
  • Electronic switches
  • Silicon
  • Electrical resistivity
  • Heat treatment
  • Stress analysis
  • Problem areas
  • Cracking(Fracturing)
  • Batch processing
  • Military requirements
  • Specifications
Source Agency
  • Non Paid ADAS
NTIS Subject Category
  • 49B - Circuits
  • 49H - Semiconductor Devices
  • 94A - Production Planning & Process Controls
Corporate Authors Microwave Associates Inc Burlington Mass
Document Type Technical Report
Title Note Quarterly rept. no. 3, 23 Dec 76-22 Mar 77.
NTIS Issue Number 197808
Contract Number
  • DAAB07-76-C-0039
MM and T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.
MM and T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.
ADA049129

  • Limiters
  • Bulk semiconductors
  • Production engineering
  • Fabrication
  • High power
  • X band
  • Electronic switches
  • Silicon
  • Electrical resistivity
  • Heat treatment
  • Stress analysis
  • Problem areas
  • Cracking(Fracturing)
  • Batch processing
  • Military requirements
  • Specifications
  • Non Paid ADAS
  • 49B - Circuits
  • 49H - Semiconductor Devices
  • 94A - Production Planning & Process Controls
  • DAAB07-76-C-0039
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