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Effects of Nuclear Radiation on Magnetic Bubble Domain Materials and Devices.

AD782015

Publication Date	1973
Personal Author	Williams, R. A.
Page Count	45
Abstract	The work described in this report is an extension of work performed on Contract no. F19628-72-C-0342. The present effort is primarily concerned with establishing failure thresholds and mechanisms of magnetic bubble domain devices. Four types of experiments were performed. A study was made of the effect of 60 KV x-rays on the hard bubble suppression properties of a neon implanted layer in (YSm)3(FeGa)5O12 material. Radiation burn-out of 300 A permalloy domain sensors was found to occur with 30 ns pulses of 1.5 MeV electrons at doses above 30,000 rads/pulse. The stability of stored information in a transient ionizing environment was investigated. Finally, measurements were made of the transient radiation response of domain sensors. (Modified author abstract)
Keywords	Thin film storage devices Radiation effects X rays Electron irradiation Magnetic domains Garnet Thin films Shift registers Transient radiation effects Logic circuits Yttrium compounds Europium compounds Thulium compounds Gallium compounds Samarium compounds Ferrates Magnetic bubble domains Permalloys
Source Agency	Air Force
NTIS Subject Category	62A - Computer Hardware
Corporate Authors	Rockwell International Corp Anaheim Calif Electronics Research Div
Document Type	Technical Report
NTIS Issue Number	197419
Contract Number	F19628-73-C-0250

Effects of Nuclear Radiation on Magnetic Bubble Domain Materials and Devices.

Effects of Nuclear Radiation on Magnetic Bubble Domain Materials and Devices.
AD782015

Publication Date	1973
Personal Author	Williams, R. A.
Page Count	45
Abstract	The work described in this report is an extension of work performed on Contract no. F19628-72-C-0342. The present effort is primarily concerned with establishing failure thresholds and mechanisms of magnetic bubble domain devices. Four types of experiments were performed. A study was made of the effect of 60 KV x-rays on the hard bubble suppression properties of a neon implanted layer in (YSm)3(FeGa)5O12 material. Radiation burn-out of 300 A permalloy domain sensors was found to occur with 30 ns pulses of 1.5 MeV electrons at doses above 30,000 rads/pulse. The stability of stored information in a transient ionizing environment was investigated. Finally, measurements were made of the transient radiation response of domain sensors. (Modified author abstract)
Keywords	Thin film storage devices Radiation effects X rays Electron irradiation Magnetic domains Garnet Thin films Shift registers Transient radiation effects Logic circuits Yttrium compounds Europium compounds Thulium compounds Gallium compounds Samarium compounds Ferrates Magnetic bubble domains Permalloys
Source Agency	Air Force
NTIS Subject Category	62A - Computer Hardware
Corporate Authors	Rockwell International Corp Anaheim Calif Electronics Research Div
Document Type	Technical Report
NTIS Issue Number	197419
Contract Number	F19628-73-C-0250